preliminary hexfet ? power mosfet pd - 9.1436b fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. 11/18/97 so-8 v dss = -20v r ds(on) = 0.058 w irf7314 description symbol maximum units drain-source voltage v ds -20 gate-source voltage v gs 12 t a = 25c -5.3 t a = 70c -4.3 pulsed drain current i dm -21 continuous source current (diode conduction) i s -2.5 t a = 25c 2.0 t a = 70c 1.3 single pulse avalanche energy e as 150 mj avalanche current i ar -2.9 a repetitive avalanche energy e ar 0.20 mj peak diode recovery dv/dt ? dv/dt -5.0 v/ ns junction and storage temperature range t j, t stg -55 to + 150 c thermal resistance ratings parameter symbol limit units maximum junction-to-ambient ? r q ja 62.5 c/w absolute maximum ratings ( t a = 25c unless otherwise noted) continuous drain current ? maximum power dissipation ? a i d p d v w d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 l generation v technology l ultra low on-resistance l dual p-channel mosfet l surface mount l fully avalanche rated
irf7314 parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC -0.78 -1.0 v t j = 25c, i s = -2.9a, v gs = 0v ? t rr reverse recovery time CCC 47 71 ns t j = 25c, i f = -2.9a q rr reverse recoverycharge CCC 49 73 nc di/dt = 100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC -21 -2.5 a ? surface mounted on fr-4 board, t 10sec. ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd -2.9a, di/dt -77a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 35mh r g = 25 w , i as = -2.9a. ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.031 CCC v/c reference to 25c, i d = -1ma CCC 0.049 0.058 v gs = -4.5v, i d = -2.9a ? CCC 0.082 0.098 v gs = -2.7v, i d = -1.5a ? v gs(th) gate threshold voltage -0.70 CCC CCC v v ds = v gs , i d = -250a g fs forward transconductance CCC 5.9 CCC s v ds = -10v, i d = -1.5a CCC CCC -1.0 v ds = -16v, v gs = 0v CCC CCC -25 v ds = -16v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC 100 v gs = -12v gate-to-source reverse leakage CCC CCC -100 v gs = 12v q g total gate charge CCC 19 29 i d = -2.9a q gs gate-to-source charge CCC 4.0 6.1 nc v ds = -16v q gd gate-to-drain ("miller") charge CCC 7.7 12 v gs = -4.5v, see fig. 10 ? t d(on) turn-on delay time CCC 15 22 v dd = -10v t r rise time CCC 40 60 i d = -2.9a t d(off) turn-off delay time CCC 42 63 r g = 6.0 w t f fall time CCC 49 73 r d = 3.4 w ? c iss input capacitance CCC 780 CCC v gs = 0v c oss output capacitance CCC 470 CCC pf v ds = -15v c rss reverse transfer capacitance CCC 240 CCC ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) i gss a w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns s d g
irf7314 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. typical source-drain diode forward voltage 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v = -10v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs -7.50v -4.50v -4.00v -3.50v -3.00v -2.70v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.1 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs -7.50v -4.50v -4.00v -3.50v -3.00v -2.70v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v
irf7314 fig 8. maximum avalanche energy vs. drain current fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage fig 5. normalized on-resistance vs. temperature r ds(on ) , drain-to-source on resistance ( w ) r ds(on) , drain-to-source on resistance ( w ) 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.3a -2.3a -2.9a 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (n orm alized) a i = -2.9a v = -4.5v d gs 0.0 0.2 0.4 0.6 0.8 048121620 a -i , drain current (a) d v = -4.5v gs v = -2.7v gs 0.03 0.04 0.05 0.06 0.07 0.08 0.0 2.0 4.0 6.0 8.0 a gs v , gate-to-source volta g e (v) i = -5.3a d
irf7314 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage 0 200 400 600 800 1000 1200 1400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) i = -2.9a v = -16v d ds 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
irf7314 package outline so8 outline so8 part marking information exam ple : this is an irf7101 date code (yw w ) y = last digit of the year w w = w eek w afer lot code (last 4 digits) xxxx bottom part number top international rectifier log o f7101 312 k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inches millimeters min max min max a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are shown in millimeters (inches). 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1
irf7314 so8 dimensions are shown in millimeters (inches) tape & reel information 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 11/97
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